By Topic

Improving HF properties of limiters with modified bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Verhoeven, C.J.M. ; Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands ; Straver, W.G.M. ; Westra, J.R. ; van Roermund, A.H.M.

Very often the collector-to-substrate capacitance of bipolar transistors is the largest parasitic capacitor. This implies that in circuits in which the collector can not be short-circuited, like in resistor loaded differential pairs, the HF-behavior can deteriorate a lot. However, in the case of resistor loaded transistors, the influence of the capacitor can be reduced by placing a shielding implant between the isolation diffusion of the transistor and its active collector region. Several limiter circuits have been built with the special transistors and they have been compared to limiters built with standard transistors. The improvement of the HF-behavior has been verified by measurement. For the shielded version 3 dB roll off is at about 1 GHz, for the standard version it is at about 720 MHz, at equal bias conditions

Published in:

Analog Signal Processing (Digest No: 1996/236), IEE Third one-day Colloquium on

Date of Conference:

20 Nov 1996