By Topic

Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Loitsch, Bernhard ; Walter Schottky Institut and Physik Department, Technische Universität München, Garching 85748, Germany ; Schuster, Fabian ; Stutzmann, Martin ; Koblmuller, Gregor

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4789983 

We explore the effect of growth kinetics on the structural properties of In-polar InN films on GaN templates grown near the thermal dissociation limit by plasma-assisted molecular beam epitaxy. Unlike the common growth temperature limit (T ≈ 500 °C) for In-polar InN grown under In-rich conditions, slightly N-rich conditions are demonstrated to shift the available growth temperature window to much higher temperatures (by >50 °C). InN films grown in this high-T/N-rich regime show significantly reduced off-axis X-ray diffraction rocking curve peak widths and record low threading dislocation densities (TDD ∼ 4 × 109 cm-2) even for film thicknesses <1 μm, as compared to state of the art In-rich growth. The reduction of TDD is attributed to more effective TD inclination and annihilation under N-rich growth, delineating prospective routes for improved InN-based materials.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 5 )