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5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

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13 Author(s)
Zhihua Dong ; Key Labatory of Nanodevices & Applic., Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China ; Shuxin Tan ; Yong Cai ; Hongwei Chen
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Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nm-thick Al2O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches.

Published in:

Electronics Letters  (Volume:49 ,  Issue: 3 )

Date of Publication:

Jan. 31 2013

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