Cart (Loading....) | Create Account
Close category search window

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Zhihua Dong ; Key Labatory of Nanodevices & Applic., Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China ; Shuxin Tan ; Yong Cai ; Hongwei Chen
more authors

Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nm-thick Al2O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches.

Published in:

Electronics Letters  (Volume:49 ,  Issue: 3 )

Date of Publication:

Jan. 31 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.