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130-nm CMOS K-Band Two-Element Differential Power-Combining Oscillators

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2 Author(s)
Sin-Han Yang ; Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. ; Ching-Kuang Clive Tzuang

A power-combining structure at K -band is proposed. The proposed structure, consisted of a multisection of Marchand baluns in series configuration, combines multiple pairs of balanced signals into a single unbalanced port. The active devices, in a differential cross-coupled pair configuration, are then combined with the multibalun structure forming the CMOS multiple element oscillator. The power-combining mechanism is investigated through Y - and S -parameters. The power-combination oscillators are implemented in 0.13-μm CMOS technology, demonstrating the ability of monolithic integration. One and two cross-coupled-pair design of oscillator are measured. Experiment results for the oscillators are presented, showing maximum power-combining efficiency of 76.0%.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 3 )