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High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field

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5 Author(s)
Ohtake, Hideyuki ; Inst. for Molecular Sci., Okazaki, Japan ; Izumida, Shinji ; Zhenlin Liu ; Yamanaka, T.
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In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 μW under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation

Published in:
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:2 )

Date of Conference: 10-13 Nov 1997

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