Referenced Items are not available for this document.
In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained
Published in:
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
(Volume:2
)
Date of Conference: 10-13 Nov 1997
- Page(s):
- 203 - 204 vol.2
- Meeting Date :
- 10 Nov 1997-13 Nov 1997
- ISSN :
- 1092-8081
- Print ISBN:
- 0-7803-3895-2
- INSPEC Accession Number:
- 5835800
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/LEOS.1997.645359
- Product Type:
- Conference Publications
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