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780 nm emitting Al-free active region diode lasers with compressively-strained InGaAsP quantum wells

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4 Author(s)
Al-Muhanna, A. ; Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA ; Wade, J.K. ; Mawst, L.J. ; Fu, R.J.

Summary form only given. 0.78 μm, Al-free active-region, compressively-strained (Δa/a=0.85%) InGaAsP quantum well diode lasers have been grown by MOCVD. Broad-stripe (100 μm-wide) devices exhibit low threshold current densities, 290 A/cm2 (L=1 mm), and cw front-facet output powers of 2.2 W

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:2 )

Date of Conference:

10-13 Nov 1997