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Temperature dependence of gain characteristics in 1.3-μm AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers

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5 Author(s)
Higashi, T. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Fujii, T. ; Yamamoto, T. ; Ogita, S.
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Summary form only given. So far 1.3 μm AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T0 of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T0 was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:2 )

Date of Conference:

10-13 Nov 1997

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