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A CMOS MEMS Capacitive Flow Sensor for Respiratory Monitoring

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3 Author(s)
Liao, S.-H. ; Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan ; Chen, W.-J. ; Lu, M.S.-C.

This letter presents a novel complementary metal-oxide-semiconductor (CMOS) micromachined capacitive flow sensor for respiratory monitoring. Airflow induces a pressure change on the suspended sensing plate and causes a capacitance change with respect to the bottom electrode. The microstructure fabricated by post-CMOS metal etch occupies an area of 190$,times,$190 $mu{rm m}^{2}$ and possesses a sensing capacitance of 180 fF. Output waveform of consecutive breaths is successfully measured with an output noise of 14 $mu{rm V}$ for a measuring bandwidth of 0.5 Hz, which is equivalent to a minimum detectable capacitance change and airflow velocity of 0.13 aF and 0.2 mm/sec, respectively.

Published in:

Sensors Journal, IEEE  (Volume:13 ,  Issue: 5 )