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Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

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7 Author(s)
Chi-Shiang Hsu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Huey-Ing Chen ; Po-Cheng Chou ; Jian-Kai Liou
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The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure held-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H2/N2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (≈20 s) is acquired when the hydrogen concentration is higher than 1-ppm H2/N2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

Published in:

Sensors Journal, IEEE  (Volume:13 ,  Issue: 5 )

Date of Publication:

May 2013

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