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Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity profiles as well as damage profiles, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation. A comparison of simulation results with experimental data shows that the models predict both the impurity profiles and the damage profiles very successfully for a wide range of implant conditions. The damage profiles from germanium implant simulations have been used for subsequent multiple implant simulations and excellent agreement with experimental results has been achieved.