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Floating body effects in polysilicon thin-film transistors

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6 Author(s)
M. Valdinoci ; Dept. of Electron., Bologna Univ., Italy ; L. Colalongo ; G. Baccarani ; G. Fortunato
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Floating body effects in polycrystalline silicon thin film transistors (poly-TFTs) are investigated by means of numerical simulations. The current increase in the output characteristics at large VDS, usually referred to as the “kink effect” is explained by impact ionization occurring in the high-field region at the drain end of the channel. Its effect is enhanced by the action of a parasitic bipolar transistor in the back-channel region, whose base current arises from the impact generated holes. The dependence of the kink on the recombination kinetics is also investigated

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IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 12 )