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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:44 Issue:12 Help

Effect of i-layer parameters on the performance of Si n+-i-n+ homojunction far-infrared detectors

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2 Author(s)
Yuan, Y. ; Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA ; Perera, A.G.U.

A unified formalism, including space-charge-limited (SCL) conduction, tunneling, and the multiple-image-force effect, is developed to perform a complete analysis of Si n+-i-n+ homojunction interfacial workfunction internal photoemission (HIWIP) FIR detectors. It is shown that due to the space-charge effect, the detector performance, such as cutoff wavelength (λc), quantum efficiency (η), dark current (Id), noise equivalent power (NEP), etc., is strongly influenced by the i-layer thickness (Wi ) and compensating acceptor concentration (Nai) in addition to the emitter layer parameters. As a result, the optimum operating conditions of detectors also depend on W and Nai. The background limited performance (BLIP) is evaluated, and a critical W i value is found for BLIP operation

Published in:
Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 12 )

Date of Publication: Dec 1997

Page(s):
2180 - 2186
ISSN :
0018-9383
INSPEC Accession Number:
5783504
Digital Object Identifier :
10.1109/16.644633
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1997
Sponsored by :
IEEE Electron Devices Society

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