Referenced Items are not available for this document.
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40, cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
12
)
Date of Publication: Dec 1997
- Page(s):
- 2122 - 2127
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5783495
- Digital Object Identifier :
- 10.1109/16.644624
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1997
- Sponsored by :
- IEEE Electron Devices Society
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