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Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates

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6 Author(s)
O. Issanchou ; Lab. de Phys. de la matiere Condensee, CNRS, Toulouse, France ; J. Barrau ; X. Marie ; J. -Y. Emery
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Compressively strained GaInAsP quantum wells (QW's), with a square potential profile and grown on InP substrates, have demonstrated their high potential for the improvement of 1.55-μm lasers. Recently, we have proposed another approach which consists of creating a linear variation of the bandgap inside the well, by means of a linear variation in the As concentration. Calculations show that, in such a V-shaped structure: (1) the effective density of states related to the heavy hole bands is reduced compared to that of a large abrupt-shaped QW and (2) the overlap between the electron and the hole wavefunctions is expected to be greater than in a narrow abrupt-shaped QW. The consequences of these effects are described

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IEEE Journal of Quantum Electronics  (Volume:33 ,  Issue: 12 )