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Numerical simulation of broad-area high-power semiconductor laser amplifiers

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4 Author(s)
Zheng Dai ; Dept. of Optoelectron., Ulm Univ., Germany ; Michalzik, R. ; Unger, P. ; Ebeling, K.J.

A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers. Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing and optically induced nonlinearities. A self-consistent iteration is developed to simulate the beam filamentation in broad-area semiconductor amplifiers with residual facet reflectivities. The experimentally observed periodic filamentation with intensity minima close to zero is investigated numerically

Published in:

Quantum Electronics, IEEE Journal of  (Volume:33 ,  Issue: 12 )