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High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing

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3 Author(s)
Lee, M.K. ; Inst. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Wang, Y.H. ; Chu, C.H.

The sensitivity of a porous silicon Schottky barrier photodetector is much improved through rapid thermal oxidation and rapid thermal annealing processes. Under our optimum preparation conditions, photocurrent can reach about 21 mA (under 22.4 mW/cm2 tungsten lamp illumination) and dark current is about 5.4 μA (at reverse bias of 10 V). The quantum efficiencies are about 90% at wavelengths shorter than 750 nm and 80%-70% in the wavelength range 750-1050 nm

Published in:

Quantum Electronics, IEEE Journal of  (Volume:33 ,  Issue: 12 )

Date of Publication:

Dec 1997

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