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Stacked pentacene layer organic thin-film transistors with improved characteristics

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4 Author(s)
Lin, Y.-Y. ; Pennsylvania State Univ., University Park, PA, USA ; Gundlach, D.J. ; Nelson, S.F. ; Jackson, T.N.

Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 12 )

Date of Publication:

Dec. 1997

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