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Fabrication of low-stress dielectric thin-film for microsensor applications

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3 Author(s)
B. C. S. Chou ; Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Jin-Shown Shie ; Chung-Nan Chen

A method of fabricating low-stress dielectric thin film as the supporting material of micromachined devices is reported. The film is processed by post thermal oxidation of silicon-rich nitride (SN) deposited on a silicon substrate by LPCVD. Due to the compensation on the nitride by its top oxide, an ultra-low residual stress less than 10 MPa can be obtained with a proper oxidation scheme. Characteristics of the oxidized nitride were analyzed by Auger electron spectroscopy (AES) and ellipsometry. Large floating membranes of 4/spl times/4 cm/sup 2/ and 400-nm thick can be made by this method with TMAH etching.

Published in:

IEEE Electron Device Letters  (Volume:18 ,  Issue: 12 )