By Topic

Fabrication of low-stress dielectric thin-film for microsensor applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chou, B.C.S. ; Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Shie Jin-Shown ; Chung-Nan Chen

A method of fabricating low-stress dielectric thin film as the supporting material of micromachined devices is reported. The film is processed by post thermal oxidation of silicon-rich nitride (SN) deposited on a silicon substrate by LPCVD. Due to the compensation on the nitride by its top oxide, an ultra-low residual stress less than 10 MPa can be obtained with a proper oxidation scheme. Characteristics of the oxidized nitride were analyzed by Auger electron spectroscopy (AES) and ellipsometry. Large floating membranes of 4/spl times/4 cm/sup 2/ and 400-nm thick can be made by this method with TMAH etching.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 12 )