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Nonlinear modeling of SiGe HBTs up to 50 GHz

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3 Author(s)
Rheinfelder, C.N. ; Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany ; Beisswanger, F.J. ; Heinrich, W.

A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:45 ,  Issue: 12 )