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p-channel modulation-doped GaSb field-effect transistors

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3 Author(s)
Luo, L.F. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Longenbach, K.F. ; Wang, W.I.

GaSb p-channel modulation-doped field-effect transistors based on a p-AlSb0.9As0.1/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1 mu m gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction field-effect transistors.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 5 )