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Evidence of gain enhancement in long wavelength strained quantum well laser diodes

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4 Author(s)
Osinski, J.S. ; Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; Grodzinski, P. ; Zou, Y. ; Dapkus, P.D.

Threshold current behaviour of InGaAs/InP quantum well laser diodes grown by atmospheric pressure MOCVD is measured and used as a means for determining characteristic modal gain constants. Structures incorporating 1.1% strain in the multiquantum well active region exhibit a threshold current density of 506 A/cm2 at a cavity length of 1498 mu m, and are described by a characteristic modal gain constant that is 70% higher than in a similar device with 0.2% strain.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 5 )