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Browse Journals & Magazines > Applied Physics Letters ...> Volume:102 Issue:4 Help

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

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10 Author(s)
Li, T. ; Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA ; Wei, Q. Y. ; Fischer, A. M. ; Huang, J. Y.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4789758 

The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.

Published in:
Applied Physics Letters  (Volume:102 ,  Issue: 4 )

Date of Publication: Jan 2013

Page(s):
041115 - 041115-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.4789758
Product Type:
Journals & Magazines
Date of Current Version :
04 February 2013
Issue Date :
Jan 2013

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