Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques

Schottky barrier height (ΦSBH) tuning from the insertion of dipole providing materials at the TaN/Si and TaN/GaAs interface are investigated using photoelectron spectroscopy and electrical techniques. In-situ processing and characterization of these contact interfaces is utilized to gain understanding of the formation of the dipole at the AlOx/SiO2 interface. Changes in both the band bending and vacuum work function by the insertion of AlOx/SiO2 at the interface are observed on both Si and GaAs substrates and are correlated with a large reduction in the ΦSBH on Si. Applications of this contact scheme for contact resistivity reduction, extremely shallow junctions, and Schottky barrier metal–oxide–semiconductor field effect devices are also discussed.