By Topic

Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kong, Yuechan ; Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, People's Republic of China ; Zhou, Jianjun ; Kong, Cen ; Dong, Xun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Monolithic integrated enhancement/depletion (E/D)-mode AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on an AlGaN/GaN heterostructure with an engineered triple-cap-layer. The energy band of the cap layer is greatly tailored by the polarizations within it, which improves the controllability of D-to-E mode conversion with gate recess. The uniformity of the threshold voltage (Vth) across a 3″ wafer is assessed and the standard deviations of Vth are 0.1 V and 0.14 V for E-mode and D-mode devices, respectively. Direct-coupled field-effect transistor logic E/D HEMT inverter and 17-stage ring oscillator are demonstrated, and the latter shows a oscillation frequency of 201 MHz at a supply voltage of 1 V, corresponding to a propagation delay of 146 ps/stage and a power-delay product of 1.96 pJ/stage.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 4 )