Cart (Loading....) | Create Account
Close category search window

Sensing Margin Enhancement Techniques for Ultra-Low-Voltage SRAMs Utilizing a Bitline-Boosting Current and Equalized Bitline Leakage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Anh Tuan Do ; Virtus IC Design Center of Excellence, Nanyang Technol. Univ., Singapore, Singapore ; Truc Quynh Nguyen ; Kiat Seng Yeo ; Kim, T.T.-H.

A small bitline sensing margin is one of the most challenging design obstacles for reliable ultra-low-voltage static random access memory (SRAM) implementation. This paper presents design techniques for bitline sensing margin enhancement using decoupled SRAMs. The proposed bitline-boosting current scheme improves the bitline sensing margin at a given bitline configuration. The bitline sensing margin can be further augmented by equalizing bitline leakage. Simulation using a 40-nm CMOS process shows that the proposed techniques achieve larger bitline sensing margin, wider operating temperature and supply range, and a larger number of cells per bitline.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:59 ,  Issue: 12 )

Date of Publication:

Dec. 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.