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Analysis of the TID Induced Failure Modes in NOR and NAND Flash Memories

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10 Author(s)
Yihua Yan ; Department of Engineering Physics, Tsinghua University, Beijing, China ; Wei Chen ; Ruyu Fan ; Xiaoqiang Guo
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The total ionizing radiation effects of several NOR and NAND flash memories under the read only mode are investigated. An X-ray microbeam test was also performed to help detect the radiation susceptibility of different circuits. The error distribution is mapped for the NOR flash memories, featuring significant address related signature. Relevant circuits are analyzed to address these failure modes.

Published in:

IEEE Transactions on Nuclear Science  (Volume:60 ,  Issue: 1 )