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Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM

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7 Author(s)
Sami Rosenblatt ; IBM Systems and Technology Group, NY, USA ; Daniel Fainstein ; Alberto Cestero ; John Safran
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A random intrinsic chip ID generation method using retention fails is implemented in 32 nm SOI embedded DRAM. A dynamic key algorithm employs a unique pair of 4 Kb binary strings for an ID record for secure authentication. These strings are generated by controlling a wordline low voltage to search for a number of fails matching the corresponding challenge numbers. The algorithm further includes field-tolerant authentication by detecting a number of common bits analytically guaranteed for successful recognition, while preventing ID spoofing during the read operation. This results in 100% successful unique ID generation and recognition in two temperature and three voltage conditions per chip for a total of \sim 420 k ID pair comparisons in 266 chips. The analytical model predicts a 99.999% successful recognition rate for 10 ^{6} parts. Finally, a method to enable a field-tolerant ID using multiple domains will be discussed.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:48 ,  Issue: 4 )