Cart (Loading....) | Create Account
Close category search window
 

Direct Impact of Chemical Bonding of Oxynitride on Boron Penetration and Electrical Oxide Hardening for Nanoscale Flash Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Taehoon Kim ; Micron Technol., Micron Technol., Inc., Boise, ID, USA ; Koka, S. ; Surthi, S. ; Zhuang, K.

We report the direct correlation between chemical bonding and the physical-electrical properties of oxynitride (SiON). Through comparing oxynitrides grown by furnace anneal and by plasma method in the low-nitrogen-concentration region (<; 16 at %), we found that the boron blocking efficiency and oxide hardening against high-field electrical stress are directly enhanced by the N-Si3 and N-(SiOx)3 configurations, while the Si2-N-O configuration, in spite of the much higher nitrogen concentration, moderately degrades the hardening effect with less improvement for boron blocking. The results indicate that controlling the nitrogen bonding configuration for tunnel oxide may be a key solution to the insufficient reliability of nanoscale Flash memory.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )

Date of Publication:

March 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.