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Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

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9 Author(s)
Zhiyuan Zheng ; State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China ; Zimin Chen ; Yingda Chen ; Hualong Wu
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We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the p -GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%-16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality.

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Display Technology, Journal of  (Volume:9 ,  Issue: 4 )