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Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

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12 Author(s)
Zhang, Feng ; Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China ; Sun, Guosheng ; Zheng, Liu ; Liu, Shengbei
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Al2O3 films were prepared by atomic layer deposition using trimethylaluminum and H2O at 250 °C on 4H-SiC substrates and annealed at 1000 °C in N2. The as-deposited and annealed Al2O3 films were measured and analyzed near the Al2O3/SiC interfaces by using an X-ray photoelectron spectroscopy (XPS) with etching processing. The XPS results showed that as-deposited Al2O3 films were O-rich and converted to anhydride Al2O3 films after annealed at 1000 °C in N2. Si suboxides were found both at as-deposited and annealed Al2O3/SiC interfaces. Energy band shift between Al2O3 and 4H-SiC was found after annealing. The conduction band offsets of as-grown and annealed Al2O3/SiC were 1.90 and 1.53 eV, respectively. These results demonstrated that Al2O3 can be a good candidate to be applied in SiC metal-oxide-semiconductor devices.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 4 )

Date of Publication:

Jan 2013

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