By Topic

Influence of annealing temperatures on TiO2 nanotubes formation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Aimi, J.N. ; Fac. of Appl. Sci., Univ. Teknol. MARA, Shah Alam, Malaysia ; Muzamir, M.M. ; Saifollah, A. ; Zainovia, L.
more authors

Herein, we report on the influence of annealing temperature on the formation of anatase and rutile phase of TiO2. Electrochemical anodization was carried out in two electrodes bath consisting of excess Fluorine ions. The anode is a 0.1 mm thick Ti foil and the cathode is Pt electrode. Anodization was conducted at 20 V in 1M Na2SO4 electrolyte. The anodized foil was subjected to morphological and structural characterizations using field emission scanning electron microscope and Raman spectroscopy. As-anodized foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 °C at Raman frequency 149.41 cm-1. This indicates that the transformation occurs at this range of temperatures with a more complete transformation at higher temperature. Annealing at higher than 600 °C the pattern shows a peak belonging to the rutile peak and it induces thickening of the nanotubes wall and at above 700 °C, the nanotubes structure has completely disappeared. For Rutile phase structural appeared at Raman frequency 633.59 cm-1 assigned as Raman vibrational mode Eg and A1g, respectively.

Published in:

Business, Engineering and Industrial Applications (ISBEIA), 2012 IEEE Symposium on

Date of Conference:

23-26 Sept. 2012