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Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

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6 Author(s)
Emi Machida ; Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan ; Masahiro Horita ; Koji Yamasaki ; Yasuaki Ishikawa
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We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm ^{2}/{\hbox {V}}\cdot{\hbox {\sec }} . The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.

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Journal of Display Technology  (Volume:9 ,  Issue: 9 )