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Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

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6 Author(s)
Machida, E. ; Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan ; Horita, M. ; Yamasaki, K. ; Ishikawa, Y.
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We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm$^{2}/{hbox{V}}cdot{hbox{sec}}$ . The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.

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Display Technology, Journal of  (Volume:9 ,  Issue: 9 )