Simulation and analysis of quantum capacitance in single-gate MOSFET, double-gate MOSFET and CNTFET devices for nanometre regime

Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for single gate MOSFET, double gate MOSFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is not possible to get in single gate silicon MOSFET and double gate MOSFET.