By Topic

Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Sheng, P. ; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan ; Bonell, F. ; Miwa, S. ; Nakamura, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW) states in the ultrathin Fe (001) electrode. However, resonant positions of QW states were systematically shifted by one monolayer when compared with the first-principles calculation results. X-ray absorption spectroscopy and magnetic circular dichroism measurements were also performed. While Fe oxide presence at Fe/MgO interface was ruled out, Fe/Cr intermixing could not be excluded. Hence, controlling the Fe/Cr interface may affect QW state.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 3 )