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This paper presents a millimeter-wave (MMW) two-stage low noise amplifier (LNA) that adopts a current-reused topology to reduce the power consumption. The designed current-reused LNA comprises two stacked common source (CS) amplifiers with the same dc current for each stage to enhance the power gain. The proposed LNA is fabricated in tsmcTM 90-nm RF CMOS technology that achieves a peak S21 gain of 12 dB, a noise figure (NF) of 6.9 dB, an input third-intercept point (IIP3) of -4.1 dBm at 51 GHz under DC power of 7.7 mW from a 1.4 V supply voltage. The proposed LNA with transmission line (TL) inductors yields a compact chip size of only 0.37 mm2 and thus the calculated figure-of-merit (FoM) is up to 5.24 at 51 GHz.