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A low-power, compact size millimeter-wave two-stage current-reused low noise amplifier in 90-nm CMOS technology

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3 Author(s)
Hung-Ting Chou ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Zhi-Lin Ke ; Hwann-Kaeo Chiou

This paper presents a millimeter-wave (MMW) two-stage low noise amplifier (LNA) that adopts a current-reused topology to reduce the power consumption. The designed current-reused LNA comprises two stacked common source (CS) amplifiers with the same dc current for each stage to enhance the power gain. The proposed LNA is fabricated in tsmcTM 90-nm RF CMOS technology that achieves a peak S21 gain of 12 dB, a noise figure (NF) of 6.9 dB, an input third-intercept point (IIP3) of -4.1 dBm at 51 GHz under DC power of 7.7 mW from a 1.4 V supply voltage. The proposed LNA with transmission line (TL) inductors yields a compact chip size of only 0.37 mm2 and thus the calculated figure-of-merit (FoM) is up to 5.24 at 51 GHz.

Published in:

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Date of Conference:

4-7 Dec. 2012