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Electrical model analysis of RF/high-speed performance for different designed TSV patterns by wideband double side measurement techniques

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5 Author(s)
Chun-Hsun Lin ; Adv. Product Design & Testing Dept., Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan ; Liu, C. ; Hsin-Kai Huang ; Kuang-Ching Fan
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Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 μm, 50 μm, 100 μm to 200 μm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its' de-embed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.

Published in:

Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International

Date of Conference:

24-26 Oct. 2012

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