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Properties of Al2O3 thin films grown by atomic layer deposition

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6 Author(s)
Frohlich, K. ; Inst. of Electr. Eng., Bratislava, Slovakia ; Micusik, M. ; Dobrocka, E. ; Siffalovic, P.
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Thin Al2O3 films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al2O3 films grown at low temperatures have promising applications in microelectronics.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Date of Conference:

11-15 Nov. 2012