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Early stage degradation of InAlN/GaN HEMTs during electrical stress

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9 Author(s)
Tapajna, M. ; Inst. of Electr. Eng., Bratislava, Slovakia ; Gregusova, D. ; Cico, K. ; Fedor, J.
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Early stage degradation of InAlN/GaN HEMTs submitted to OFF and semi-ON state stress at a drain bias of 50 V was investigated. Degradation in different parts of the device upon OFF and semi-ON state stress inferred from the comprehensive electrical characterization indicates predominantly an hot-electron degradation mechanism, as no degradation in the gate leakage current was observed for both stress conditions. Based on `end' resistance measurements suggesting more pronounced degradation in the drain and source resistance after OFF and semi-ON state stressing, respectively, it is speculated that impact ionization can play a role in the degradation of InAlN/GaN HEMTs.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Date of Conference:

11-15 Nov. 2012