By Topic

Early stage degradation of InAlN/GaN HEMTs during electrical stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Tapajna, M. ; Inst. of Electr. Eng., Bratislava, Slovakia ; Gregusova, D. ; Cico, K. ; Fedor, J.
more authors

Early stage degradation of InAlN/GaN HEMTs submitted to OFF and semi-ON state stress at a drain bias of 50 V was investigated. Degradation in different parts of the device upon OFF and semi-ON state stress inferred from the comprehensive electrical characterization indicates predominantly an hot-electron degradation mechanism, as no degradation in the gate leakage current was observed for both stress conditions. Based on `end' resistance measurements suggesting more pronounced degradation in the drain and source resistance after OFF and semi-ON state stressing, respectively, it is speculated that impact ionization can play a role in the degradation of InAlN/GaN HEMTs.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on

Date of Conference:

11-15 Nov. 2012