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Silicon carbon nitride films were grown at various deposition temperature from 350 to 550°C by means of electron cyclotron resonance (ECR) plasma deposition with gas mixture: 5% SiH4 in N2(20 sccm), CH4(10 sccm). A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the SiCN films. The concentration of elements in the SiCN films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analysed by infrared (IR) spectroscopy. Photoluminescence (PL) spectra were measured at 293 K. The concentration of hydrogen was decreased with increasing deposition temperature. The IR results showed the presence of Si-C, Si-N, Si-H, C-H, C-N, N-H and Si-O bonds. The PL results showed increassing PL intensity with increasing a sample deposition temperature from 350 to 450°C and decreasing PL intensity with increasing a sample deposition temperature from 450 to 550°C.