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Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography

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6 Author(s)
Ting-En Hsieh ; National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. Department of Materials Science and Engineering ; Lu-Che Huang ; Yueh-Chin Lin ; Chia-Hua Chang
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In this work, AlGaN/GaN HEMTs with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The method is simple of cost effective. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance higher than 200 mS/mm and a breakdown voltage higher than 100 V. Through high-frequency measurements, the device revealed a current gain cut-off frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz.

Published in:

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Date of Conference:

19-21 Sept. 2012