By Topic

Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ting-En Hsieh ; Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Lu-Che Huang ; Yueh-Chin Lin ; Chia-Hua Chang
more authors

In this work, AlGaN/GaN HEMTs with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The method is simple of cost effective. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance higher than 200 mS/mm and a breakdown voltage higher than 100 V. Through high-frequency measurements, the device revealed a current gain cut-off frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz.

Published in:

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Date of Conference:

19-21 Sept. 2012