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This study presents a novel investigation on thin film Cu2ZnSnS4 (CZTS) solar cells in the superstrate structure in which all the semiconductor layers were prepared under non-vacuum conditions. The solar cell structure (SLG)/FTO (Fluorine doped Tin-Oxide)/Ag/CdS/CZTS/Al had the SnO2:F (window), CdS (buffer) and CZTS (absorber) layers deposited by APCVD, Sol-gel and Sol-gel sulphurizing methods respectively. Each of the layers of the solar cells was first optimized before fabricating the solar cells. As a result of our investigations, the most efficient solar cell showed an open circuit voltage of 230mV, a short circuit current density of 4.40mA/cm2, a fill factor of 0.277 and a conversion efficiency of 0.28%.