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A 500-MHz 4-Mb CMOS pipeline-burst cache SRAM with point-to-point noise reduction coding I/O

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10 Author(s)
Nakamura, K. ; Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan ; Takeda, K. ; Toyoshima, H. ; Noda, K.
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A 32-b 500-MHz 4-1-1-1 operation 4-Mb pipeline burst cache SRAM has been developed. In order to achieve both high bandwidth operation and short latency operation, we developed the following technologies: 1) a prefetched pipeline-burst scheme with double late-write buffers, 2) gate size reduction and a bit-line equalization by source resetting, 3) point-to-point bidirectional coding I/O's to reduce bus noise and power consumption, and 4) a three-level metal 0.25-μm CMOS process technology with six transistor memory cells

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 11 )

Date of Publication:

Nov 1997

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