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A four-level storage 4-Gb DRAM

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2 Author(s)
Okuda, T. ; ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan ; Murotani, T.

A 4-Gb DRAM with multilevel-storage memory cells has been developed. This large memory capacity is achieved by storing data at four levels, each corresponding to two-bit-data storage in a single memory cell. The four-level storage reduces the effective cell size by 50%. A sense amplifier using charge coupling and charge sharing was developed for the four-level sensing and restoring. The sense amplifier uses a hierarchical bit-line scheme and operates in a time-sharing mode, thus reducing the sense amplifier area. A 4-Gb DRAM fabricated using 0.15-μm CMOS technology measures 986 mm2. The memory cell is 0.23 μm2. Its capacitance of 60 fF is achieved by using a high-dielectric-constant material BST

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 11 )

Date of Publication:

Nov 1997

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