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An Electromigration Failure Distribution Model for Short-Length Conductors Incorporating Passive Sinks/Reservoirs

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2 Author(s)
Lin, M.H. ; Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan ; Oates, A.S.

The effects of passive (inactive) sinks and reservoirs on electromigration failure distributions close to critical current density jc are examined. We develop a model to accurately predict failure distributions where the inactive segment modifies the void nucleation component of jc. We show that failure distributions can exhibit large deviations of median time to fail in the presence of sinks and reservoirs, but at low percentiles typical of reliability requirements, failure time modifications are much reduced.

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Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 1 )