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Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 ^{\circ}\hbox {C} \hbox {Si}_{2}\hbox {H}_{6} Passivation

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16 Author(s)
Xiao Gong ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Genquan Han ; Fan Bai ; Shaojian Su
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In this letter, we report the first study of the dependence of carrier mobility and drive current IDsat of Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge0.958Sn0.042 channels were grown on (100) and (111) Ge substrates. Sub-400°C Si2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/ drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)-oriented device demonstrates 13% higher IDsat over the (100)oriented one at a VGS-VTH of -0.6 V and VDS of -0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation.

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Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )