Cart (Loading....) | Create Account
Close category search window
 

Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Woo-Suk Sul ; Nat. Nanofab Center, Daejeon, South Korea ; Chae-Hun Lee ; Gyu-Seong Cho

We present the diverse characteristics of silicon photomultipliers using three different structures. Three different trench gap-filled materials are fabricated, and a detailed comparative analysis on their device performances is carried out. The high energy resolution in the gamma spectrum (16%-17%), and the highest fill factor (73.6%) are achieved with the trench-type guard-ring structure. However, due to its trench-associated defects, the trench-type guard-ring structure showed the lowest dark count rate characteristic in the single microcell, which dramatically slowed due to the decreased probability of crosstalk in the 4 × 4 matrix array Si photomultipliers. In particular, the performance of the oxide + polysilicon gap-filled trench-type guard-ring structure is intermediate in most aspects of the performance compared to the other types of guard-ring structures.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 3 )

Date of Publication:

March 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.