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Modulation characteristics of high speed (f-3 dB=20 GHz) tunneling injection InP/InGaAsP 1.55 μm ridge waveguide lasers extracted from optical and electrical measurements

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5 Author(s)
Klotzkin, David ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Syao, Kao-Chih ; Bhattacharya, Pallab ; Caneau, C.
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High-performance multiquantum-well 1.55 μm InP-based tunneling injection lasers are fabricated using a conventional single mode ridge waveguide fabrication process and characterized. The lasers consist of an eight quantum-well strain-compensated gain region and a 30-Å InP tunneling barrier. The bandwidth of these lasers is measured to be 20 GHz with a damping limited bandwidth extracted from the K-factor (determined from optical modulation measurements) of 26 GHz. To our knowledge, this is the highest measured bandwidth recorded for an InP-based simple ridge waveguide structure. The differential gain is measured to be as high as 1×10-15 cm2, with a measured gain compression coefficient ε of 5×10-17 cm3. It is shown that the K-factor can also be extracted solely from measurements of the small signal electrical impedance. The carrier escape time τesc is determined to be 0.5 ns, independent of bias. This high frequency performance is achieved with a very simple device structure at room temperature under constant drive currents

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Lightwave Technology, Journal of  (Volume:15 ,  Issue: 11 )