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Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes

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5 Author(s)
J. N. Haralson ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; J. W. Parks ; K. F. Brennan ; W. Clark
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The breakdown location within a planar InP/In0.53Ga0.47As (InGaAs) separate absorption, grading, charge sheet, and multiplication (SAGCM) avalanche photodiode (APD), using the standoff breakdown suppression design to replace guard rings, depends on the two-dimensional (2-D) geometry of the Zn diffused well. Since the geometry of this p+ diffusion is dependent upon the surface etch, the effects of varying the etch depth (tstandoff) and length of the sloped etch edge (wslope ) are studied using a two-dimensional drift-diffusion simulator. It is determined that the etch depth brackets a region where center breakdown dominance is possible. To ensure center breakdown within this region it is concluded that there is a maximum value that the slope of the etch walls must not exceed

Published in:

Journal of Lightwave Technology  (Volume:15 ,  Issue: 11 )