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Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

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9 Author(s)
Yulun Xian ; State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China ; Shanjin Huang ; Zhiyuan Zheng ; Bingfeng Fan
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The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection layer at the end of the MQWs. The forward- and reverse-leakage currents were significantly reduced compared with those of the LEDs without the inserting layer. The light output power was enhanced by 13% at a 350 mA injection current. The improved performance could be ascribed to the dislocation suppression and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped structure.

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Display Technology, Journal of  (Volume:9 ,  Issue: 4 )